IPB05N03LB G

IPB05N03LB OptiMOS®2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application V DS 30 V R DS(on),max 5.0 mΩ ID 80 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TO263-3 PG-TO220-3-1 • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Type Package Marking IPB05N03LB PG-TO263-3 05N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 80 T C=100 °C 72 Pulsed drain current I D,pulse T C=25 °C3) 320 Avalanche energy, single pulse E AS I D=80 A, R GS=25 Ω 136 Reverse diode dv /dt dv /dt I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Unit A mJ kV/µs ±20 V 94 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 Rev. 0.94 page 1 2006-05-10 IPB05N03LB Parameter Values Symbol Conditions Unit min. typ. max. - - 1.6 minimal footprint - - 62 6 cm2 cooling area5) - - 40 30 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=50 A - 6.1 7.6 mΩ V GS=10 V, I D=60 A - 4.2 5.0 - 1 - Ω - 94 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=60 A 2) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 102 A. 3) See figure 3 T j,max=150 °C and duty cycle D